Exploring Electron Tunneling Rates in Silicon Donor Qubits

Donor-based qubits in silicon are a promising architecture for quantum information science. Fast read out of the qubit state is vital, however, the speed of readout can be limited by the tunneling time of the electron on the donor. The speed with which these events occur determines the measurement time and thus plays a role in the "shot" time. As a result, the timescale of these tunneling events is of particular interest to us. In this work, we measure tunnel times through single-shot detection of tunneling events, and explore how the rates depend on the detuning between the donor and the charge sensing dot.