Towards Quantum Photonics: Characterizing and Engineering Defects in CVD-Hexagonal Boron Nitride

Hexagonal boron nitride (hBN) has emerged as a promising testbed for quantum photonics applications, particularly due to its ability to host single-photon emitters (SPEs) at room temperature. This research focuses on large-area growth, engineering of defects in chemical vapor deposition (CVD) grown hBN thin films on dielectric substrates, aiming to advance scalable quantum photonic technologies. CVD grown hBN thin films offer a more scalable alternative to mechanical exfoliated films, potentially allowing for large-scale integration of SPEs with photonic devices. Our approach involves direct synthesis of hBN films on dielectric substrates, providing immediate optical accessibility for defect characterization. Optical characterization techniques, such as confocal Raman and micro-photoluminescence spectroscopies, are employed to optimize growth conditions and conduct optical studies, with photoluminescence mapping of large-area hBN films providing spatial defect identification. The ability to directly grow and characterize optically active defects in hBN thin films paves the way for developing integrated quantum photonic devices.