Magnetic and electrical properties of RGa(Ge,Si) family of materials

The RGaGe/Si family of materials, crystallizing in the non-centrosymmetric tetragonal space group, offers an ideal platform to explore the interplay between electronic topology and magnetism. Motivated by their structural similarity to the Weyl semimetal TaAs, we have grown high-quality single crystals of these materials and studied their structural, magnetic, and electrical properties. Our magnetization measurements reveal a variety of magnetic structures, depending on the choice of rare-earth ions, from simple ferromagnetic to complex antiferromagnetic and canted spin configurations. Additionally, we observe a large anomalous Hall effect, which may arise from the intrinsic Berry curvature generated by Weyl nodes. These results highlight the role of magnetic order in tuning the topological properties of the electronic bands. In this talk, I will present our findings on the crystal growth, magnetization, and transport properties of RGaGe/Si compounds and discuss the potential implications of those findings.