Diffused trenches for high fill-factor Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes (LGADs) are a class of silicon detectors that have been specifically designed for the fast detection of minimum ionizing particles (mips) in High-Energy Physics experiments. While they provide timing resolution on the order of a few tens of picoseconds, they cannot achieve high spatial resolution due to the intrinsic characteristics of their construction. Thus, active R&D is ongoing to develop detectors based on LGADs to improve their spatial resolution while maintaining their timing performance. The devices that will be discussed are AC-coupled LGADs and Deep-Junction LGADs and how their performance compares with Trench-Isolated LGADs (TI LGADs), a design in which trenches are etched at the periphery of the pixels to isolate them while providing a high fill-factor. In this presentation, details on a variation of this latter approach will be provided, demonstrating its feasibility by means of 2-dimensional Technology Computer-Aided Design (TCAD) simulations.