Synthesis of Gallium Oxide Nanowires

We have synthesized gallium oxide (GaO$_{\mathrm{2}})$ nanowires by depositing gallium onto a gold-covered silicon wafer at high temperatures. This is done by having a flow of N$_{\mathrm{2}}$ gas, kept above atmospheric pressure, pass through a tube furnace at 1000 C through an evaporated gallium sample, allowing the gallium to condense onto the wafer. When the system is held at low pressure, however, no synthesis occurs.