Magnetic Tunnel Junctions with W Layers.

POSTER

Abstract

Magnetic Tunnel Junctions with Perpendicular Magnetic Anisotropy are promising candidates for next generation of magnetic random access memories. Room-temperature tunneling magnetoresistance behavior has been analyzed in CoFeB/MgO/CoFeB perpendicular magnetic tunnel junctions with different buffer layers for annealing at 340\textdegree C and 380\textdegree C. Transport properties have been studied in these junctions. The TMR rapidly increased to a maximum within the first few minutes, up to 135{\%}, followed by a steady decline afterwards. These results highlight the importance of proper buffer/capping layer in perpendicular tunneling junction.

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Authors

  • Brian Zamarrripa Roman

    University of Central Florida

  • Yamil Nieves

    Florida International University, Univ of Puerto Rico - Humacao, University of Nebraska, Université Louis Pasteur Strasbourg, University of Nebraska, Université de Strasbourg, Univ of Puerto Rico - Humacao, Centre for Astrophysics of the University of Porto, The University of Chicago, Brown University, University of Arizona, None, University of South Florida

  • Yamil Nieves

    Florida International University, Univ of Puerto Rico - Humacao, University of Nebraska, Université Louis Pasteur Strasbourg, University of Nebraska, Université de Strasbourg, Univ of Puerto Rico - Humacao, Centre for Astrophysics of the University of Porto, The University of Chicago, Brown University, University of Arizona, None, University of South Florida