Optical Characterization of 2D Ga2Se2 via Molecular Beam Epitaxy and Exfoliation

Harnessing the properties of quantum mechanics has allowed for developments of quantum technologies that can be used for calculations, simulations, to improve methods for secure communications, etc. However, these technologies require a more reliable and scalable way of producing two level quantum systems for a large-scale quantum device architecture. One possible approach is to develop a method for large-scale growth via Molecular Beam Epitaxy (MBE) of high-quality 2D materials in which an array of features on the substrate induces localized strain in the grown film to create an array of quantum emitters. An alternative to MBE that is commonly used when studying 2D materials is exfoliating from bulk material and transferring onto a patterned substrate. MBE grown Ga₂Se₂ films and exfoliated Ga₂Se₂ flakes were characterized using photoluminescence (PL) measurements and Raman Spectroscopy. We report a comparison of the PL intensities and Raman signals between films exfoliated from a bulk crystal and those grown by MBE, which will be used to perform studies on the degradation of GaSe to inform handling procedures of the MBE grown films.