Driving charge noise sources in semiconductor qubit devices with oscillating electric field

Charge noise is thought to be the major decoherence mechanism of qubits in semiconductor qubit devices. It gives rise to 1/f-like noise that has been reported in a wide variety of devices. This produces short coherence times T₂ due to the high noise power at low frequencies. It is suspected that two-level systems (TLSs) made up of charge defects or traps are responsible for the 1/f noise. We propose a method to characterize the TLSs and reduce the noise by applying an oscillating electric field to drive the defects. The driving field can shift the power spectral density to higher frequencies. We analyze this phenomenon using the purely stochastic resonance method and also the Lindblad equation method to test the idea that the TLSs can also exhibit some level of quantum coherence. We show that the coherence time of a qubit can be increased substantially when certain conditions on the driving field are satisfied, which is similar to the observations of spin bath driving for spin qubits in diamonds.