Quantum emission from Oxygen-related defects in Hexagonal Boron Nitride with strongly suppressed phonon side band

Recently quantum light emission from color centers in hexagonal Boron Nitride (hBN) has emerged as a promising candidate for the next generation of quantum applications. Unlike most other solid-state platforms, color centers in hBN do not need cryogenic temperatures to emit antibunched photons. The wide spectral range of quantum light emission from hBN (UV to Visible) suggests that a large variety of microscopic defect centers exists. Here we focus on oxygen-related defects and present a method to activate them in a reliable way. Systematic optical studies reveal that these oxygen-related defect centers emit in the 750-850nm wavelength band and feature strongly suppressed phonon side band emission. Methods will be discussed to virtually eliminate blinking and spectral diffusion giving rise to stable emission. We will further discuss results from magneto-PL studies aiming to uncover the underlying spin structure.