Magnetic Anisotropy Modulation in Bismuth Substituted Yttrium Iron Garnet with Voltage Controlled Strain

Voltage control of spintronic devices can lead to extremely energy efficient computing in intelligent edge devices and future IoTs [1,2]. In our previous study we reported voltage induced strain mediated modulation of perpendicular magnetic anisotropy (PMA) in Yttrium substituted dysprosium Iron garnet (Y: DyIG) [3]. In this study, we perform magnetic anisotropy modulation in Bismuth substituted Yttrium Iron Garnet (Bi: YIG) with voltage induced strain. A 55 nm thick Bi:YIG film is grown on piezoelectric PMN-PT/SiO2 (5 nm) where the SiO2 layer is used to prevent the heterostructure templating from perovskite. Further the ratio of Bi:Y is optimized for low coercivity. The piezoelectric is poled along [011] direction by applying voltages across the thickness of PMN-PT/SiO2/Bi-YIG heterostructure. Changes in magnetic anisotropy in poled heterostructure for different amplitude voltages will be studied in-situ with magneto-optical Kerr microscopy (MOKE).

[1]. M.A. Azam, C.A. Ross, J. Atulasimha et.al. Nanotechnology, 31, 145201 (2020)

[2]. W. A. Misba, J. Atulasimha et. al. IEEE TED, 69, 1658 (2021)

[3] M. J. Gross, W.A. Misba, K. Hayashi, D.B. Gopman, C.A. Ross, J. Atulasimha et. al. (2022) (under review)