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Isotropic strain effects on twisted bilayer graphene near the magic angle

ORAL

Abstract

In recent years, the magic angle of graphene has caused many researchers to focus on twisted bilayer graphene at the magic angle and the various ground states it manifests including superconductivity, ferromagnetism, topological states, etc. However, graphene is also attractive for its extremely high mechanical strength and endurance and it may be asked how these states respond to high levels of mechanical strain. Indeed, it is thought that built-in strain during sample fabrication may explain some sample-to-sample variation that exists in the literature [1]. By fabricating samples on flexible substrates and applying displacement to them out of plane isotropically, we are able to apply isotropic strains up to several percent, which we calibrate by directly measuring the shift of alignment marks on the substate and by recording the response of single layer graphene Landau levels to such strain. Applying this technique to twisted bilayer graphene samples away from the magic angle, we are able to tune the Hofstadter butterfly of the system with strain. Finally, studying samples closer to the magic-angle, in preliminary data, we find that strain tunes a correlated non-magnetic state at moire miniband filling factor equal to one (quarter filling) to a ferromagnetic state, detected via a gate-tunable anomalous Hall effect. Thus, we expect our strain technique to play an important role in tuning the superlattice and resultant ground states of twisted bilayer graphene.

[1] C. N. Lau, M. W. Bockrath, K. F. Mak, and F. Zhang, Nature 602, 7895 (2022)

Presenters

  • Dinesh K Yadav

    University of Utah

Authors

  • Dinesh K Yadav

    University of Utah

  • Chuankun Liu

    University of Utah

  • Jasper Bradford

    University of Utah

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Vikram V Deshpande

    University of Utah