Tunable Correlations in Twisted WSe₂ Bilayers

Twisted WSe₂ realizes a triangular lattice moiré-patterned semiconductor with a bandwidth set by the twist angle. Using electrostatic gates, it is possible to study the ground state of this material as a function of carrier doping and applied electric field using transport measurements. The applied electric field is an especially important parameter in these experiments, that effectively allows us to tune the bandwidth of the system. I will describe a series of experiments where we tune electric field, doping and twist angle to probe the emergent quantum states in this material. I will discuss the emergence of insulating states driven by correlations at half-filling of the lowest moiré subband; the melting of this insulator by doping and electric field; and the emergence of magnetic metallic states in the weakly-correlated region of the phase diagram.