Realization of Nonequilibrium Condensates of Polariton using MOCVD-grown GaAs Microcavity

Since the observation of polariton condensation in GaAs-based microcavity, molecular beam epitaxy has been traditionally used due to its high-quality growth technique. Meanwhile, metalorganic chemical vapor deposition (MOCVD) has barely been focused on studying polariton condensation, although it is a highly scalable growth technique. Here, we realized that polariton condensation using MOCVD-grown GaAs-based microcavity, which has Rabi splitting values of 10.1 meV. Furthermore, we investigated the occupancy of polariton depending on the polariton density, which shows the nonequilibrium condensates behavior.