Graphene enabled practical Molecular Electronics

The idea of producing functional elements on atomic length scales has become a recent focus of our research since the scaling of conventional electronics is reaching the molecular domain.The concept to build a device within a molecular scale by exploring the properties of 2D material Graphene.

This works shows an intriguing finding by fabricating a vertical molecular field effect transistor in conjugation with graphene in such a way that the thickness in nm and gate voltage can be tuned according to the desired device. In this work, the semiconducting properties of the new compounds have been estimated in the monolayer Vertical Molecular Field Effect Transistor (VFET) fabricated by the Langmuir Blodgett (LB) technique using the bottom-contact and bottom-gate device structure. The morphology of the LB layer used as the active layer in VFETs has been investigated using atomic force microscopy.The current-voltage measurements of the devices show the decrease in current on further increase in voltage in a device which termed Negative Differential Resistance (NDR) shows high Peak-to-Valley Current Ratio (PVCR) for the devices.The understanding of thermoelectric properties of molecular junctions by experimental investigation of molecular thin film transistor is studied.The Time-Domain Thermoreflectance (TDTR) techniques and the figure of merit reveals an interesting feature of Graphene-Langmuir Blodgett film based molecular transistor.