Si/SiGe Qubit Devices Enabled by Advanced Semiconductor Fabrication

Intel’s Components Research and Intel Labs organizations have recently demonstrated the industry’s highest reported yield (95%) and uniformity to date of silicon spin qubit devices. These devices are fabricated on a planar Si/SiGe heterostructure with extreme ultraviolet (EUV) lithography utilizing Intel’s advanced 300mm transistor research and development facility. This achievement represents a major milestone for quantum chip fabrication and scaling on Intel’s transistor manufacturing processes line. An overview of the process integration scheme, process parameters and low temperature device characterization that led to these innovative advancements toward technology maturation and commercialization will be discussed.