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Greatly Enhanced Emission from Spin Defects in Hexagonal Boron Nitride Enabled by a Low-Loss Plasmonic Nano-Cavity

ORAL

Abstract

The negatively charged boron vacancy (V_B^-) spin defects in hexagonal boron nitride (hBN) have attracted significant attention due to their potential applications in the development of ultrathin quantum sensors. However, their development is stymied by their poor quantum efficiency. Previous works have demonstrated intensity enhancement with plasmonics and dielectric cavities; however, the enhancement reported to date is relatively modest. In this work, we demonstrate 1685-times enhancement of photoluminescence (PL) intensity by coupling the defects with nano-plasmonic cavities. We take advantage of low-loss epitaxial silver films and shallow implantation of defects to maximize PL enhancement. This development combined with preserved spin contrast can enable practical quantum sensors ~3nm distances from materials of interest.

This work is supported by the U.S. Department of Energy (DOE), Office of Science through the Quantum Science Center (QSC), DE-AC05-00OR22725, National Science Foundation Award 2015025-ECCS, DMR-1747426, and Air Force Office of Scientific Research Award FA9550-22-1-0372.

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Publication: arXiv:2207.08357 (2022)<br>https://arxiv.org/abs/2207.08357

Presenters

  • Abhishek Bharatbhai B Solanki

    Purdue University

Authors

  • Abhishek Bharatbhai B Solanki

    Purdue University

  • Xiaohui Xu

    Purdue University

  • Demid Sychev

    Purdue University

  • Xingyu Gao

    Purdue University

  • Samuel Peana

    Purdue University, PURDUE UNIVERSITY

  • Aleksandr Baburin

    BMSTU, Russia

  • Karthik Pagadala

    Purdue University

  • Zachariah O Martin

    Purdue University

  • Sarah Nahar Chowdhury

    Purdue University

  • Yong P Chen

    Purdue University

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Ilya Rodionov

    BMSTU, Russia

  • Alexander V Kildishev

    Purdue University

  • Tongcang Li

    Purdue University

  • Pramey Upadhyaya

    Purdue University, Elmore Family School of Electrical and Computer Engineering, Purdue University; West Lafayette, Indiana 47907, USA

  • Alexandra Boltasseva

    Purdue University

  • Vladimir M. M Shalaev

    Purdue University