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Interacting interlayer-moiré-excitons in twisted WS<sub>2</sub>/WSe<sub>2</sub> heterobilayer

ORAL

Abstract

Stacking transition metal dichalcogenide (TMDC) monolayers with an angle of twist [1,2] create artificial superlattices. In such twisted heterobilayers, the emergence of the moiré pattern forms spatially periodic deep potential traps, giving rise to moiré sub-bands. Due to type II band alignment in these heterobilayers, electrons and holes reside in different layers, leading to interlayer moiré-trapped bound excitonic states.

In this work, we create closely spaced moiré traps using a twisted heterobilayer of WS2/WSe2 with a twist angle of θ≈59°. We observe three equally spaced emission peaks arising from the moiré sub-bands. The lowest (highest) energy moiré exciton exhibits localized (delocalized) character, as identified by their sublinear (linear) power law and slow (fast) decay time. We probe the interaction among these moiré sub-band states using steady-state and time-resolved photoluminescence measurements with gate voltage and optical power as varying parameters. Our main observations are: (1) With increasing positive Vg (n-doping), the lifetime of the moiré-trapped exciton comes down from 100 ns to 10 ns, with a suppressed steady-state PL intensity – indicating an enhanced nonradiative process due to spatial flattening of the conduction band. (2) With an increase in Vg, the moiré trapped excitons exhibit an unconventional Stark shift. (3) With an increase in the incident optical power, the moiré localized exciton energy peak shows a spectral blue shift up to 20 meV, owing to coulomb interaction from neighboring moiré-trapped excitons.

References

1. Kha Tran et al., Nature, 567, 71-75, 2019.

2. Fengcheng Wu et al., Phys. Rev. B 97, 035306, 2018.

Presenters

  • Medha Dandu

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India

Authors

  • Suman Chatterjee

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India

  • Medha Dandu

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India

  • Pushkar Dasika

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India

  • Rabindra Biswas

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Varun Raghunathan

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India

  • Kausik Majumdar

    Department of Electrical Communication Engineering, Indian Institute of Science, Bangalore 560012, India