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Observation of quadrupolar and dipolar excitons in a semiconductor heterotrilayer

ORAL

Abstract

We report the observation of quadrupolar and dipolar excitons in a semiconductor heterotrilayer consisting of stacked, angle-aligned WSe2/WS2/WSe2 monolayers. Characteristics of the quadrupolar excitons are manifested in tunable dipole moments under an external electric field, a decrease in exciton energy of 12 meV from coherent hole tunneling between the two outer layers, and suppressed exciton-exciton interactions. At high exciton density, we also see signatures of a phase of staggered dipolar excitons, which is driven by the attractive interaction between oppositely aligned static dipole moments of dipolar interlayer excitons.

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Presenters

  • Leo Yu

    Stanford University

Authors

  • Leo Yu

    Stanford University

  • Kateryna Pistunova

    Stanford Univ

  • Jenny Hu

    Stanford University, Stanford Univ

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Tony F Heinz

    Stanford University, SLAC National Accelerator Laboratory