Poor Man's Approach to Exploring the Electronic Structures in Transition-Metal Oxides
ORAL
Abstract
In transition metal oxides (TMOs), the interactions among electronic spins, charges and orbitals account for the exotic properties such as metal-insulator transition, high-temperature superconductivity and colossal magnetoresistance. However, decent angle-resolved photoemission spectroscopy (ARPES) data are still lacking in many "uncleavable" perovskite-structure TMOs, which hinders the comprehensive understanding of the emergent phenomena in these correlated materials. Here, we develop a new method to prepare clean surfaces of Nd0.8Sr0.2NiO3 and La0.7Ca0.3MnO3 thin films, and investigate their electronic structures to track the microscopic origin of the metal-insulator transitions in these two systems. Our method can be generalized to study the 4d and 5d TMOs.
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Publication: None
Presenters
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Yong Zhong
Stanford University
Authors
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Yong Zhong
Stanford University
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Kyuho Lee
Stanford University, Stanford University, SLAC National Accelerator Laboratory
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Tiffany Chun-An Wang
Stanford Univ
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Donghui Lu
SLAC - Natl Accelerator Lab
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Makoto Hashimoto
SLAC - Natl Accelerator Lab
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Harold Hwang
Stanford Univ, Stanford University
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Zhixun Shen
Stanford University, Stanford Insitute for Materials and Energy Sciences, Stanford