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Tunable spin and valley excitations of correlated insulators in Γ-valley moiré bands

ORAL

Abstract

Moiré superlattices formed from transition metal dichalcogenides (TMDs) have been shown to support a variety of quantum electronic phases that are highly tunable using applied electromagnetic fields. In this talk, I will describe a new approach to engineer and study correlations within Γ-valley moiré bands in twisted double bilayer WSe2. Through a combination of local and global electronic compressibility measurements, we identify charge-ordered phases at multiple integer and fractional moiré band fillings ν. By measuring the magnetic field dependence of their energy gaps and the chemical potential upon doping, we reveal spin-polarized ground states with novel spin polaron quasiparticle excitations. In addition, an applied displacement field allows us to realize a new mechanism of metal-insulator transition at ν = -1 driven by tuning between Γ- and K-valley moiré bands. Together, our results demonstrate control over both the spin and valley character of the correlated ground and excited states in this system.

Publication: arXiv:2206.10631

Presenters

  • Benjamin Foutty

    Stanford University

Authors

  • Benjamin Foutty

    Stanford University

  • Jiachen Yu

    Stanford University

  • Trithep Devakul

    MIT

  • Carlos R Kometter

    Stanford Univ, Stanford University

  • Yang Zhang

    MIT, Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA, Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Liang Fu

    Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

  • Ben Feldman

    Stanford University, Stanford Univ