NIR Sensing Ambipolar Organic Phototransistor based on Solution Processable N-Type Semiconductor

The organic thin film transistor (OTFT) is a potential candidate for next-generation electronic devices due to its several advantages. An organic phototransistor (OPT) contains a gate, source, and drain in a three-terminal design, much like an OTFT. The advantage of OPT is that it has a light-sensing ability that makes it possible for it to enhance a photonic electrical signal. Additionally, near-infrared (NIR) sensing OPT, has applications in a number of industries [1]. Recently, ambipolar OPT that can function on both n-type and p-type systems has been created [2]. An ambipolar organic transistor has a property that is extremely helpful for device downsizing, making the design and fabrication of circuits possible [3] [4]. We developed ambipolar OPT using the single component approach with donor-acceptor type molecules in the active layer. As a result, we developed an NIR detecting ambipolar phototransistor using the NFA material Y6. This led to the implementation of NIR ambipolar OPT with average electron and hole mobilities of 0.038 and 0.07 cm2/Vs, photosensitivity of 22.72, and photoresponsivity of 0.8A/W.