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The interplay of field-tunable strongly correlated states in Γ and K moiré bands in a heterotrilayer device

POSTER

Abstract

In twisted transition metal dichalcogenide (TMD) heterobilayer systems the moiré bands that form the highest valence band generally arise from K-derived states. However, as more layers are added for naturally stacked TMDs the Γ valley becomes energetically relevant. Here, we optically probe the exciton-polarons in the presence of correlated states in a heterotrilayer 2H-bilayer WSe2/monolayer MoSe2 moiré heterostructure. We observe the formation of exciton-polarons where the direct exciton at ±K is dressed by holes residing in Γ derived moiré bands, evidenced by their distinctive hole-doping dependent dispersions. As the number of holes per moiré unit cell is tuned, abrupt changes of the attractive polarons reveal the formation of strongly correlated hole states within the Γ bands at both integer and intermediate fractional fillings. Upon application of a vertical electric field we change the ordering of Γ- and K-derived bands and transfer holes between Γ and K correlated states. Further, the WSe2 attractive polarons dressed by the Γ and K correlated holes reveal contrasting polarisation properties under an applied magnetic field. The results are fully supported by density functional theory calculations which show highest Γ band projects onto a honeycomb lattice with inequivalent A and B sites, while the K band forms a triangular lattice. Our results reveal the potential of heterotrilayer TMDs for Hubbard model investigations for both honeycomb and triangular lattices within the same devices.

Publication: The interplay of field-tunable strongly correlated states in Gamma and K moiré bands in a heterotrilayer device (manuscript in preparation)

Presenters

  • Aidan J Campbell

    Heriot-Watt Univ, Heriot-Watt University

Authors

  • Aidan J Campbell

    Heriot-Watt Univ, Heriot-Watt University

  • Valerio Vitale

    Imperial College London, Università di Trieste

  • Shun Feng

    Heriot-Watt Univ, Heriot-Watt University

  • Hyeonjun Baek

    Heriot-Watt Univ, Heriot-Watt University

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Jonathan Ruhman

    Bar Ilan University, Bar-Ilan University, Massachusetts Institute of Technology MIT

  • Johannes C Lischner

    Imperial College London

  • Brian D Gerardot

    Heriot-Watt Univ, Heriot-Watt University