Voltage-Controlled Translational Motion of a Magnetic Skyrmion: a Magnetic Skyrmion Transistor

Since its experimental demonstration at room temperature, magnetic skyrmions have been intensively studied as one of novel information carriers because of their unique topological characteristics. Although many skyrmion devices—including a skyrmion racetrack memory, a skyrmion synapse device, and a skyrmion reshuffler—have been reported, voltage-controlled skyrmion devices have rarely been reported. Here, we demonstrate the spatial uniformity of voltage-controlled magnetic anisotropy. Using this technique, we prove that the shape and topology of a skyrmion are well-maintained when passing through two different anisotropy areas. Finally, a proof-of-concept experiment of a skyrmion transistor is presented, which has never been demonstrated experimentally. Our findings will open a new route toward the design and realization of skyrmion-based devices in the near future.