Thin film growth of 3D antiferromagnet NdFeO<sub>3</sub>: spin hall magnetoresistance as a special probe for film-characterization
POSTER
Abstract
In past few years, insulating 3D antiferromagnets (AFM) that exhibit spontaneous net magnetic moment (weak ferromagnetism due to spin-canting) are gaining attention from the spintronics community. Notably, the net moment and Neel vector, both provide handles for manipulating spin transport via external magnetic field making these materials a promising choice for exploring novel antiferromagnetic spintronics devices. Recent spin transport studies on single crystalline 3D AFMs, DyFeO3 and Ho0.5Dy0.5FeO3 have highlighted usefulness of spin Hall magnetoresistance (SMR) as a probing for the magnetic anisotropy [1, 2].
Here, we have deposited 3D AFM, NdFeO3 (NFO) thin films using pulsed LASER deposition method, on two substrates; LaAlO3 (LAO) (001) and SrTiO3 (STO) (001). NFO thin films can form crystal-domains with two different orientations (001) and (110). These films were characterized with the help of in-plane and out-of-plane XRD scans and measuring its magnetization by SQUID magnetometer. We observed that the strain in the film has influence on the magnetization as well as spin-reorientation transition temperature. Further, SMR is used as an effective tool for quantifying the crystal-domains in NFO.
[1] Hoogeboom et al PRB 103, 134406 (2021)
[2] Wagh et al PRB 106, 104426 (2022)
Here, we have deposited 3D AFM, NdFeO3 (NFO) thin films using pulsed LASER deposition method, on two substrates; LaAlO3 (LAO) (001) and SrTiO3 (STO) (001). NFO thin films can form crystal-domains with two different orientations (001) and (110). These films were characterized with the help of in-plane and out-of-plane XRD scans and measuring its magnetization by SQUID magnetometer. We observed that the strain in the film has influence on the magnetization as well as spin-reorientation transition temperature. Further, SMR is used as an effective tool for quantifying the crystal-domains in NFO.
[1] Hoogeboom et al PRB 103, 134406 (2021)
[2] Wagh et al PRB 106, 104426 (2022)
Presenters
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Priyanka Garg
Indian Institute of Science, Bengaluru
Authors
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Aditya A Wagh
Indian Institute of Science, Bangalore
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Priyanka Garg
Indian Institute of Science, Bengaluru
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Suja Elizabeth
Indian Institute of Science, Bangalore
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P S Anil Kumar
Indian Institute of Science, Bangalore, India, Indian Institute of Science, Bangalore