Exchange bias and gate-tunable magnetic anisotropy in 2D multiferroic heterostructure

Tuning the magnetism in the electronic approach is a goal that has been pursued in the field of spintronics for a long time. However, this goal is rarely achieved on 2D materials. Here, we realized the manipulation of magnetism by developing a novel 2D multiferroic heterostructure. The exchange bias was observed in anomalous Hall effect (AHE) measurement, showing the strong coupling between ferromagnetic order and antiferromagnetic order in the heterostructure. With the application of the back gate voltage, the hysteresis field reduced, as observed from the narrowed AHE loop, suggesting the effective manipulation on magnetic anisotropy. These findings indicate a new way to manipulate magnetism in 2D systems via magneto-electric coupling.