Characterization of Pt quantum dots fabricated by electron-beam induced deposition

We study Pt quantum dots (QDs) deposited by focused electron-beam induced deposition on atomic layer deposition (ALD) grown Al₂O₃ on Pt-coated Si substrates, which finds potential applications in sensors, solar cells [1], and single-electron boxes. While the deposited dots are rich in carbon, the carbon content can be reduced by annealing the deposits in the oxygen environment [2]. The removal of the carbon from the dots is confirmed by the morphology studies and conductive atomic force microscopy (C-AFM) measurements before and after the annealing. The electron tunneling through the ALD grown Al₂O₃between the dots and the Pt layer is then studied using the single-electron sensitive electrostatic force microscopy (e-EFM) technique [3]. We will present the tunneling rate and charging energy of the Pt QDs in the single-electron box configuration.

[1] X. Lu, R. Wan, and T. Zhang, 23, 295 (2015).

[2] H. C. George et al., J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom. 29, 06FB01 (2011).

[3] Y. Miyahara, A. Roy-Gobeil, and P. Grutter, Nanotechnology 28, 1 (2017).