Tuning of quantum anomalous hall conductivity using different stacking of TI/FM heterostructure in room temperature

The coupling between topology and magnetism can boost the rich fundamental physics

interest. Previously, huge attention was paid to Bismuth-based material to incorporate

magnetic interactions in the parent topological compound by doping partially filled 3d/4f

elements or heterostructure engineering. Nowadays, the activeness of such work is diverted

toward the successors of the TI family, i.e., other potential topological materials, and some of

them are under scrutiny to implement magnetic heterostructure with topological protection.

In the present work, a heterostructure interface has been planned between a newly predicted.

Dirac semi-metal and layered ferromagnetic insulator with an acceptable lattice mismatch.

We have addressed the physical response, i.e., the exotic quantum anomalous Hall effect

(QAHE) driven by the Berry curvature using the first-principles density functional theory and

tuning it with a different type of heterostructure stacking. Our present study found that the

hybridization-driven magnetic proximity effect breaks the time-reversal symmetry at the

interface leading to QAHE. This work may be a guiding principle for designing

next-generation magneto-electric device applications.