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Revealing interface roughness and chemical composition distribution in III-V semiconductor quantum wells at the atomic scale

POSTER

Abstract

Ternary III-V semiconductor quantum wells (QW) have shown to be interesting platforms to explore topological superconductivity. Their performance is greatly affected by the interface morphology, which in turn can be affected by growth parameters. Optimization of growth conditions and physical properties might be possible by using characterization techniques delivering structure and compositional information with atomic precision. Here, we applied a combination of high-resolution High-Angle Annular Dark Field imaging in the Aberration-Corrected Scanning Transmission Electron Microscope, together with advanced image processing and mathematical modeling using Python libraries to understand and quantify roughness and chemical composition distribution across these heterostructures interfaces. Our findings deliver metrology parameters to assess the quality of semiconductor heterostructure and highlight the relationship between such parameters and growth conditions.

Publication: [1] C. Thomas, A. T. Hatke, A. Tuaz, R. Kallaher, T. Wu, T. Wang, R. E. Diaz, G. C. Gardner, M. A. Capano, and M. J. Manfra, Phys. Rev. Mat. 2, 104602 (2018)<br>[2] M. Nord, P. Vullum, I. MacLaren, T. Tybell, and R. Holmestad, Adv. Struct. Chem. Imaging 3, 9 (2017)<br>[3] K. Muraki, S. Fukatsu, Y. Shiraki, and R. Ito, J. Crystal Growth 127, 546 (1993)

Presenters

  • Roy D Peña

    Department of Electrical, Electronics, Informatic, and Mechanical Engineering, Universidad Nacional de San Antonio Abad del Cusco, Cusco, Peru

Authors

  • Roy D Peña

    Department of Electrical, Electronics, Informatic, and Mechanical Engineering, Universidad Nacional de San Antonio Abad del Cusco, Cusco, Peru

  • Rosa E Diaz

    Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA

  • Shuang Liang

    Purdue University

  • Michael J Manfra

    Purdue University, Microsoft Quantum Purdue, Purdue University, Birck Nanotechnology Center, Purdue University, West Lafayette, IN, USA; Microsoft Quantum Lab, Purdue University, West Lafayette, IN, USA, Physics and Astronomy, Purdue University, Department of Physics and Astronomy, Birck Nanotechnology Center, School of Electrical and Computer Engineering and Microsoft Quantum Lab West Lafayette, Purdue University, Department of Physics and Astronomy and Nanotechnology Center Purdue University, Microsoft Quantum Lab West Lafayette, Department of Physics and Astronomy, Birck Nanotechnology Center, School of Materials Engineering and School of Electrical and Computer Engineering, Purdue University