Magnetic properties of Mn<sub>3</sub>Sn thin films depending on annealing condition
ORAL
Abstract
In recent years, antiferromagnets have rapidly attracted attention because it shows several advantages such as no stray field, ultrafast spin dynamics, and current-induced phenomena, compared to ferromagnets. In particular, the non-collinear antiferromagnets (NC-AFM) based on D019 (space group=194, P63/mmc) hexagonal Mn3X (X=Ga, Ge, and Sn) is an important template in antiferromagnetic spintronics owing to nontrivial magnetic properties which are a giant anomalous Hall effect, magnetic spin Hall effect, magnetic Wely fermions, and chiral anomaly. Among the compounds, the magnetic Weyl semimetal Mn3Sn is a prime representative of NC-AFM. In Mn3Sn, the Mn atoms form a triangular sublattice in the c-plane (0001) called Kagome lattice, and their net magnetic moments are disclosed from non-collinear 120° ordered chiral spin structure. This spin texture leads to the existence of Weyl point with opposite chirality in Mn3Sn due to breaking time-reverse symmetry.
In this work, we study the spin-orbit torque (SOT) switching properties of the Mn3Sn depending on the annealing condition. The Mn3Sn thin films were prepared on MgO (110) substrates with different annealing conditions using an UHV magnetron sputtering system. We found that the annealing process gives rise to tensile strain in the ( direction in the Mn3Sn layer. The strain also enhances SOT-induced switching property of the Mn3Sn film. Our work provides further scientific and technological advances in antiferromagnetic spintronics based on Mn3Sn.
In this work, we study the spin-orbit torque (SOT) switching properties of the Mn3Sn depending on the annealing condition. The Mn3Sn thin films were prepared on MgO (110) substrates with different annealing conditions using an UHV magnetron sputtering system. We found that the annealing process gives rise to tensile strain in the ( direction in the Mn3Sn layer. The strain also enhances SOT-induced switching property of the Mn3Sn film. Our work provides further scientific and technological advances in antiferromagnetic spintronics based on Mn3Sn.
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Presenters
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subin Im
University of Ulsan
Authors
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subin Im
University of Ulsan
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Seongbin Seo
University of Ulsan
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Dongchan Jeong
Department of Physics, University of Ulsan, Korea, University of Ulsan
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Sanghwa Lee
Korea Advanced Institute of Science and Technology
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jiseok Yang
Korea Advanced Institute of Science and Technology
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Kab-Jin Kim
Korea Advanced Institute of Science and Technology
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Byong-Guk Park
KAIST
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Sanghoon Kim
Department of Physics, University of Ulsan, Korea, University of Ulsan