Micro four-point probe transport measurements on two-dimensional materials

Usually, electronic transport measurements on two-dimensional materials such as graphene and transition metal dichalcogenides require the deposition of electrodes on top of the material, in for instance the form of a Hall bar device. In this work, we show that by making use of a collinear micro four-point probe, electrical transport measurements on

small flakes of these 2D materials can be performed without having to fabricate electrodes on top of the flakes. Using probes with probe pitches down to sub-micrometer scale, we show back-gate tuned transport measurements in graphene on silicon oxide and on hexagonal boron nitride, as well as molybdenum disulfide on silicon oxide. Additionally, we

assess the possible damage caused by landing these probes on the 2D materials.