Donor doping of corundum aluminum gallium oxide alloys

Designs of electronic devices using aluminum gallium oxide (ALGO) alloys as the barrier layer and gallium oxide (Ga₂O₃) as the active layer are being considered. The success of these devices is predicated in part on the ability to achieve controlled doping of the ALGO barrier layer. We use hybrid density functional theory calculations to examine the prospects for n-type doping high-Al content corundum ALGO alloys with H, Si, Ge, Sn, Hf, Zr, and Ta. We also consider the detrimental role of cation vacancies as compensating acceptors. Based on this investigation we identify Si as the most promising n-type dopant for corundum ALGO alloys.