Spin Dependent Transient Spectroscopy

Abstract

Two techniques have long been the leading approaches for understanding the fundamental properties of point defects in semiconductor devices: electrically detected magnetic resonance (EDMR) [1] and deep level transient spectroscopy (DLTS). EDMR identifies the physicochemical nature of electrically active defects while DLTS determines their capture/emission rates and energy levels. Chen and Lang utilized the combination of these techniques in order improve their analytical power, albeit in a somewhat limited capacity [2]. We have developed a technique that expands their work which we call spin-dependent transient spectroscopy; utilizing EDMR combined with the surface-potential-scanning methods of DLTS in order to probe the energy-depth of interfacial point defects. In this work, we provide proof-of-concept results on Si/SiO₂ metal-oxide-semiconductor capacitors. We find that we can isolate and identify the chemistry of oxide/semiconductor defects as well as determine their density of states with high sensitivity, utilizing only the trapping mechanism of a single charge carrier.

References

[1] J. P. Campbell and P. M. Lenahan, Density of States of P_b1 Si/SiO₂ Interface Trap Centers, Appl. Phys. Lett. 80, 1945 (2002).

[2] M. C. Chen and D. V. Lang, Observation of Spin-Dependent Thermal Emission from Deep Levels in Semiconductors, Phys. Rev. Lett. 51, 427 (1983).