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Nanoscale variations in the Rashba parameter of BiTeI

ORAL

Abstract

BiTeI is a polar semiconductor with a strong spin-orbit coupling (SOC), which results in a large Rashba spin splitting. Due to a potential impact on spintronics and magnetoelectrics, it is essential to understand the behavior of single impurities in this material. Using scanning tunneling microscopy (STM) and spectroscopy (STS), we imaged ring-like charging states of single-atom defects on the iodine surface of BiTeI. By density functional theory (DFT) calculation, we identified the three types of defects that induce the charge rings. We use the bias dependence of the ring radius as a local probe for surface charge density. Remarkably, we correlate the defect-quantified local charge density with the local Rashba energy of spin band splitting. Our results help understand the impact of a single defect on Rashba effect, which could play a role in making spintronic devices.

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Presenters

  • Ruizhe Kang

    School of engineering and applied Sciences, Harvard University

Authors

  • Ruizhe Kang

    School of engineering and applied Sciences, Harvard University

  • Jianfeng Ge

    Leiden Institute of Physics, Leiden University, Leiden University

  • Yang He

    Harvard University, Department of Physics, Harvard University

  • Zhihuai Zhu

    Harvard University, Department of Physics, Harvard University

  • Daniel T Larson

    Harvard University, Department of Physics, Harvard University

  • Mohammed Saghir

    Department of Physics, University of Warwick

  • Geetha Balakrishnan

    University of Warwick, Department of Physics, University of Warwick

  • Jennifer E Hoffman

    Harvard University, Physics, Harvard University, Department of Physics, Harvard University