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Anion mixing effects on the electronic structure of a phosphorus-based Dirac nodal-line superconductor ZrP<sub>2-x</sub>Se<sub>x</sub>

ORAL

Abstract

Recently, a large family of superconductors emerged as mixed-anion layered phosphides, AP2-xXx (A = Zr, Hf; X = Se, S), which is based on nonsymmorphic phosphorus square-net lattice.

Here, we report our photoemission studies on the electronic structure of a typical phosphorus-based superconductor, ZrP2-xSex, with a critical temperature of Tc = 6.3 K. Core-level spectra reveal that the atomic charges of P are distinctly different between in-plane and mixed-anion sites. Valence-band spectra exhibit an upward energy shift of 0.49 eV in going from x = 0.85 to x = 0.55, indicating that replacing Se with P indeed serves as hole doping. Angle-resolved photoemission spectra unveil the presence of a diamond-shaped loop of Dirac nodal-line at 1.2 eV below Fermi level in direct analogy with a well-known Dirac nodal-line semimetal, ZrSiS, based on silicon square-net lattice. A simple model for the fundamental electronic structure of ZrP2-xSex is deduced from our experiments and calculations.

Our results indicate that the nonsymmorphic phosphorus square-net lattice provides a tunable platform for coexistence of the Dirac nodal line and the superconductivity.

Publication: [1] A. Ino et al., Phys. Rev. B 105, 195111 (2022).<br>[2] S. Ishizaka et al., Phys. Rev. B 105, L121103 (2022).

Presenters

  • Akihiro Ino

    Kurume Institute of Technology

Authors

  • Akihiro Ino

    Kurume Institute of Technology

  • Satoshi Ishizaka

    Hiroshima University, Hiroshima Uviversity

  • Takuya Kubo

    Hiroshima University

  • Takashi Kono

    Hiroshima University

  • Yudai Miyai

    Hiroshima University

  • Hitoshi Takita

    Hiroshima University

  • Wumiti Mansuer

    Hiroshima University

  • Shiv Kumar

    Hiroshima University

  • Kenya Shimada

    Hiroshima University

  • Shigenori Ueda

    National Institute for Materials Science

  • Hijiri Kito

    National Institute of Advanced Industrial Science and Technology

  • Izumi Hase

    National Institute of Advanced Industrial Science and Technology

  • Shigeyuki Ishida

    National Institute of Advanced Industrial Science and Technology, AIST, AIST, Tsukuba, Japan

  • Kunihiko Oka

    National Institute of Advanced Industrial Science and Technology

  • Hiroshi Fujihisa

    National Institute of Advanced Industrial Science and Technology

  • Yoshito Gotoh

    National Institute of Advanced Industrial Science and Technology

  • Yoshiyuki Yoshida

    National Institute of Advanced Industrial Science and Technology, AIST

  • Akira Iyo

    National Institute of Advanced Industrial Science and Technology

  • Hiraku Ogino

    National Institute of Advanced Industrial Science and Technology

  • Hiroshi Eisaki

    Inst. of Advanced Industrial Science and Tech., Tsukuba, Ibaraki 305-8568, Japan., National Institute of Advanced Industrial Science and Technology, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan, AIST, Inst. of Advanced Industrial Science and Tech., AIST, Tsukuba, Japan

  • Kenji Kawashima

    IMRA JAPAN Co., Ltd., IMRA JAPAN CO., LTD.

  • Yousuke Yanagi

    IMRA JAPAN Co., Ltd., IMRA JAPAN CO., LTD.

  • Akio Kimura

    Graduate School of Advanced Science and Engineering, Hiroshima Univ., Hiroshima Univ, Hiroshima University