Anion mixing effects on the electronic structure of a phosphorus-based Dirac nodal-line superconductor ZrP<sub>2-x</sub>Se<sub>x</sub>
ORAL
Abstract
Here, we report our photoemission studies on the electronic structure of a typical phosphorus-based superconductor, ZrP2-xSex, with a critical temperature of Tc = 6.3 K. Core-level spectra reveal that the atomic charges of P are distinctly different between in-plane and mixed-anion sites. Valence-band spectra exhibit an upward energy shift of 0.49 eV in going from x = 0.85 to x = 0.55, indicating that replacing Se with P indeed serves as hole doping. Angle-resolved photoemission spectra unveil the presence of a diamond-shaped loop of Dirac nodal-line at 1.2 eV below Fermi level in direct analogy with a well-known Dirac nodal-line semimetal, ZrSiS, based on silicon square-net lattice. A simple model for the fundamental electronic structure of ZrP2-xSex is deduced from our experiments and calculations.
Our results indicate that the nonsymmorphic phosphorus square-net lattice provides a tunable platform for coexistence of the Dirac nodal line and the superconductivity.
–
Publication: [1] A. Ino et al., Phys. Rev. B 105, 195111 (2022).<br>[2] S. Ishizaka et al., Phys. Rev. B 105, L121103 (2022).
Presenters
-
Akihiro Ino
Kurume Institute of Technology
Authors
-
Akihiro Ino
Kurume Institute of Technology
-
Satoshi Ishizaka
Hiroshima University, Hiroshima Uviversity
-
Takuya Kubo
Hiroshima University
-
Takashi Kono
Hiroshima University
-
Yudai Miyai
Hiroshima University
-
Hitoshi Takita
Hiroshima University
-
Wumiti Mansuer
Hiroshima University
-
Shiv Kumar
Hiroshima University
-
Kenya Shimada
Hiroshima University
-
Shigenori Ueda
National Institute for Materials Science
-
Hijiri Kito
National Institute of Advanced Industrial Science and Technology
-
Izumi Hase
National Institute of Advanced Industrial Science and Technology
-
Shigeyuki Ishida
National Institute of Advanced Industrial Science and Technology, AIST, AIST, Tsukuba, Japan
-
Kunihiko Oka
National Institute of Advanced Industrial Science and Technology
-
Hiroshi Fujihisa
National Institute of Advanced Industrial Science and Technology
-
Yoshito Gotoh
National Institute of Advanced Industrial Science and Technology
-
Yoshiyuki Yoshida
National Institute of Advanced Industrial Science and Technology, AIST
-
Akira Iyo
National Institute of Advanced Industrial Science and Technology
-
Hiraku Ogino
National Institute of Advanced Industrial Science and Technology
-
Hiroshi Eisaki
Inst. of Advanced Industrial Science and Tech., Tsukuba, Ibaraki 305-8568, Japan., National Institute of Advanced Industrial Science and Technology, Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki, Japan, AIST, Inst. of Advanced Industrial Science and Tech., AIST, Tsukuba, Japan
-
Kenji Kawashima
IMRA JAPAN Co., Ltd., IMRA JAPAN CO., LTD.
-
Yousuke Yanagi
IMRA JAPAN Co., Ltd., IMRA JAPAN CO., LTD.
-
Akio Kimura
Graduate School of Advanced Science and Engineering, Hiroshima Univ., Hiroshima Univ, Hiroshima University