Magnetotransport Study of FeSn Thin Films Grown on Silicon Substrates

Thin films of iron-tin alloy FeSn have been grown on silicon substrates and their structural and transport properties were investigated for the first time. We have used the molecular beam epitaxy method to grow 50 and 30 nm thick FeSn films on silicon substrates containing 10 nm of MgO as a buffer layer. The films were characterized structurally using an x-ray diffractometer, showing a hexagonal crystal structure with the space group P6/mmm (191). The results from electrical and magneto-transport measurements show these films exhibit characteristics close to metals. We have further measured the magneto-transport properties of the thin films which show positive magnetoresistance and a nonlinear Hall effect with possible multi-band transport.