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Time-Resolved ARPES Study of Floquet-Bloch States in Monolayer Tungsten Disulfide

ORAL

Abstract

Floquet engineering of the band structure has attracted much interest recently. This is usually achieved by using an intense light field to drive the system out of equilibrium and gain access to novel quantum effects, such as Floquet-Bloch states in a topological insulator, which is otherwise inaccessible in the equilibrium condition [1–3]. Time-resolved ARPES (Tr-ARPES) has been at the forefront of studying these emergent phenomena in various quantum materials such as Bismuth selenide and bulk Tungsten diselenide [1,2,4]. Here we report the observation of Floquet-Bloch states in monolayer Tungsten Disulfide using Tr-ARPES. We further discuss the impact of the driving field on the band structure.



[1] Y. H. Wang, H. Steinberg, P. Jarillo-Herrero, and N. Gedik, Science 342, 453 (2013).

[2] F. Mahmood, C.-K. Chan, Z. Alpichshev, D. Gardner, Y. Lee, P. A. Lee, and N. Gedik, Nat. Phys. 12, 306 (2016).

[3] J. W. McIver, B. Schulte, F.-U. Stein, T. Matsuyama, G. Jotzu, G. Meier, and A. Cavalleri, Nat. Phys. 16, 38 (2019).

[4] S. Aeschlimann, S. A. Sato, R. Krause, M. Chávez-Cervantes, U. De Giovannini, H. Hübener, S. Forti, C. Coletti, K. Hanff, K. Rossnagel, A. Rubio, and I. Gierz, Nano Lett. 21, 5028 (2021).

Presenters

  • Vivek Pareek

    Okinawa Institute of Science & Technology, Okinawa Institute of Science and Technology

Authors

  • Vivek Pareek

    Okinawa Institute of Science & Technology, Okinawa Institute of Science and Technology

  • David R Bacon

    Okinawa institute of science and technology, Okinawa Institute of Science and Technology

  • Xing Zhu

    Okinawa Institute of Science and Technology

  • Yang-hao Chan

    Academia Sinica, Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan, Institute of Atomic and Molecular Sciences, Academia Sinica, Lawrence Berkeley National Laboratory

  • Fabio Bussolotti

    Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR)

  • Nicholas S Chan

    Okinawa Institute of Science & Technology, Okinawa Institute of Science and Technology

  • Joel P Urquizo

    Okinawa Insitute of Science and Technology, Okinawa Institute of Science and Technology

  • Kenji Watanabe

    National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Takashi Taniguchi

    National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

  • Michael K Man

    Okinawa Institute of Science and Technology

  • Julien Madéo

    Okinawa Insitute of Science and Technology, Okinawa Institute of Science and Technology

  • Diana Y Qiu

    Yale University

  • Kuan Eng Johnson Goh

    Department of Physics, National University of Singapore; Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), IMRE, A*STAR, Department of Physics, NUS, Division of Physics and Applied Physics, NTU

  • Felipe H da Jornada

    Stanford University, Stanford

  • Keshav M Dani

    Okinawa Institute of Science & Technology, Okinawa Institute of Science and Technology