Bulk incorporation studies of Sn atoms into Si-MOS substrates for use as a nuclear spin qubit

Recent theoretical work suggests that Sn atoms incorporated into silicon are compelling candidates for nuclear spin qubits in a quantum dot shuttle-based architecture [1]. To realize this vision, a sparse density of Sn atoms will need to be reliably incorporated into silicon in the region where the quantum dots are formed. We will present the results of bulk incorporation studies of implanted Sn into Si-MOS material stacks. Using a combination of different characterization techniques, we find ample evidence that implanted Sn does incorporate in silicon near the oxide interface where an electron confined by a quantum dot would reside in a qubit device. In addition, we will discuss progress on the development of our Si-MOS quantum dot platform and implications for implanting Sn into silicon quantum dots.



[1] Wayne M. Witzel, Jesse J. Lutz, and Dwight R. Luhman, arxiv:2206.06285 (2022).