Conductance enhancement at non-polar SrHfO3/BaSnO3 interface

We report two-dimensional electron gas-like (2DEG) characteristics at the non-polar SrHfO3(SHO)/BaSnO3(BSO) interface. SHO/La-doped BSO (BLSO) interfaces are grown on MgO (100) substrates with BaSnO3 and BaHfO3 buffer by pulsed laser deposition. The epitaxial growth of SHO/BLSO interface structure was confirmed by high resolution X-ray diffraction and reciprocal space mapping. We have measured the electrical properties of the SHO/BLSO interface as a function of the La doping ratio of the BLSO layer as well as the thickness of the SHO layer. Additionally the carrier confinements of SHO/BLSO interfaces were measured by Capacitance-Voltage profiling technique with a mercury probe. The 2DEG-like behavior will be discussed first in terms of potential oxygen vacancy formation at the interface due to very slow oxygen diffusion in SHO. We will also discuss the possibility for the large conduction band offset at the interface between SHO and BSO to create the potential well at the interface.