Gate tunable superconductivity in Sn/InAs nanowires

Ever-increasing interest in super-semiconducting hybrid nanowire systems, as building blocks for realizing Majorana zero modes and field-tunable qubits, solicits research on new material combinations and fabrication techniques. Sn has emerged as a promising alternative to Al, inducing hard-gap and large switching currents in these semiconducting 1D channels, also alleviating the need for epitaxially matched interfaces [1,2]. Here, we report our findings on induced superconductivity in Sn/InAs nanowires and gate tunability in accidentally defined shadow SNS junctions. We will also discuss our progress in deterministic etching of Sn that would enable definition of superconducting junctions and islands on these nanowires.

[1] M. Pendharkar., et al., Science 372, 508(2021)

[2] S. Khan., et al., ACS Nano, 14, 11 (2020)