Developing a Valley-Spin Readout Method in Bilayer WSe₂

Qubits utilizing the valley pseudospin degree of freedom have the potential to serve as an attractive alternative to qubits that use electron spin exclusively. In this presentation, we discuss the design of bilayer WSe₂ quantum dot devices that seek to take advantage of a novel valley-spin/charge conversion mechanism to determine valley-spin lifetimes in a dispersive readout scheme. Further consideration is given to the nanoscale fabrication techniques used, and we share our plans for the measurement and characterization of a valley-spin qubit using these devices.