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Ultrahigh dielectric permittivity in oxide ceramics by hydrogenation

ORAL

Abstract

Boosting dielectric permittivity representing electrical polarizability of dielectric materials has been considered a keystone for achieving a new stage of scientific breakthroughs as well as technological advances in various multifunctional devices. In this work, we demonstrate the significant enhancement of low-frequency dielectric constant in oxygen-deficient oxide ceramics via the hydrogenation induced by water dissociation. In the as-sintered state, the initial dielectric constant in Ni-substituted BaTiO3 ceramics is very low (~103 at 1 Hz, the off-state). When ceramics are exposed to high humidity, a giant dielectric constant (~106 at 1 Hz, the on-state) is obtained, which is three orders of magnitude higher than that in the pristine state. It appears that the ultrahigh dielectric permittivity in the on-state is restored to the original value in the off-state via the thermal annealing. The conversion between these two dielectric states via the ambient-environment-mediated treatments and the successive application of external stimuli allows us to realize reversible control of dielectric relaxation characteristics in oxide ceramics. The achieved huge dielectric permittivity in the ambient-environment-treated Ni-substituted BaTiO3 ceramics would originate from spatial inhomogeneity of electrical polarizability induced by the hydrogenation. Conceptually, our work is of potential interest for realizing a new concept of ceramic-based dielectric sensors (e.g., hygrometers), which are able to detect water vapor in ambient air with high efficiency and sensitivity.

Presenters

  • Nguyen Xuan Duong

    University of Ulsan, Republic of Korea, U. of Ulsan

Authors

  • Nguyen Xuan Duong

    University of Ulsan, Republic of Korea, U. of Ulsan

  • Ji-Soo Jang

    Korea Institute of Science and Technology, Republic of Korea

  • Min-Hyoung Jung

    Sungkyunkwan University, Republic of Korea, Sungkyunkwan University, SKKU

  • Jong-Seong Bae

    Korea Basic Science Institute, Republic of Korea, KBSI

  • Chang Won Ahn

    University of Ulsan, Republic of Korea

  • Jong Sung Jin

    Korea Basic Science Institute, Republic of Korea

  • Kyuwook Ihm

    Pohang Accelerator Laboratory, Republic of Korea

  • Gyehyeon Kim

    Ulsan National Institute of Science and Technology, Republic of Korea, UNIST

  • So Yeon Lim

    Sookmyung Women's University, Republic of Korea

  • Jongmin Lee

    Gwangju Institute of Science and Technology, Republic of Korea

  • Dang Duc Dung

    Ha Noi University of Science and Technology, Viet Nam

  • Soonil Lee

    Changwon National University, Republic of Korea

  • Young-Min Kim

    Sungkyunkwan University, Republic of Korea

  • Sanghan Lee

    Gwangju Institute of Science and Technology, Republic of Korea

  • Sang Mo Yang

    Sogang University, Republic of Korea, Sogang U.

  • Changhee Sohn

    UNIST Korea, Ulsan National Institute of Science and Technology, Republic of Korea, UNIST, Department of Physics, Ulsan National Institute of Science and Technology, Ulsan, Republic of Korea

  • Ill Won Kim

    University of Ulsan, Republic of Korea

  • Hu Young Jeong

    Ulsan National Institute of Science and Technology, Republic of Korea, Ulsan National Institute of Science and Technology, UNIST

  • Seung-Hyub Baek

    Korea Institute of Science and Technology, Republic of Korea

  • Tae Heon Kim

    University of Ulsan, Republic of Korea, U. of Ulsan