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Controlled Switching of Stationary Surface Silicon Dimers

ORAL

Abstract

Dimer pairs of the unterminated Si(100)-2x1 surface undergo an energy lowering lattice distortion. In this ground state, the Si dimer buckles, causing one atom to lower while the other is raised. This buckling phenomenon disappears when the surface is terminated with a hydrogen monolayer. Selectively removing pairs of H atoms that belong to Si dimers causes the dimer buckling to return. STM imaging of dimer structures at high biases allow us to observe them in a dynamic regime where dimers rapidly switch between buckled configurations. At very low biases, however, we enter the static regime where the buckling of dimers remains fixed. Furthermore, STM pulses on dimer structures enables for the controlled flipping of the buckled dimer orientation. We explore the underlying physics behind this and their possible applications.

Presenters

  • Furkan M Altincicek

    University of Alberta

Authors

  • Furkan M Altincicek

    University of Alberta

  • Christopher Leon

    University of Alberta

  • Taras Chutora

    University of Alberta

  • Max Yuan

    University of Alberta

  • Jeremiah Croshaw

    Univ of Alberta, University of Alberta

  • Roshan Achal

    Univ of Alberta, University of Alberta

  • Lucian Livadaru

    Quantum Silicon, Quantum Silicon Inc.

  • Jason Pitters

    Quantum Silicon, National Research Council Canada

  • Robert A Wolkow

    Univ of Alberta, University of Alberta