Superconducting devices based on shadow wall deposited tin on selective area grown buffered InAs nanowires

Clean, disorder free interfaces are one of the key requirements for the unambiguous detection of Majorana zero modes in hybrid semiconductor superconductor systems. To this end, we have recently produced structures where shadow walls were used to deposit tin on selective area grown (SAG) InAs nanowires. In this talk, we present our fabrication techniques for making devices with these InAs/Sn SAG of different geometries. We also present in detail some low temperature characterization results such as gate tunable supercurrent, induced gap, critical magnetic field and 2e-1e charging effect and discuss future potential applications in this material system.