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GMAG: Light Matter Interaction

FOCUS · M58 · ID: 1067620

Presentations

  • Spin-Valley pumping and long electron spin transport in a transition metal dichalcogenide monolayer

    ORAL · Invited

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    Publication: [1] C. Robert et al., Spin/Valley Pumping of Resident Electrons in WSe2 and WS2 Monolayers, Nat. Comm. 12, 5455 (2021).<br>[2] L. Ren et al., Optical detection of long electron spin transport lengths in a monolayer semiconductor, Phys. Rev. Lett. 129, 027402 (2022)

    Presenters

    • Cedric ROBERT

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA, Institut National des Sciences Appliquees de Toulouse

    Authors

    • Cedric ROBERT

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA, Institut National des Sciences Appliquees de Toulouse

    • Lei REN

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA

    • Sangjun Park

      PMC Ecole Polytechnique

    • Fabian Cadiz

      PMC Ecole Polytechnique

    • Dorian Beret

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA

    • Hans Tornatzky

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA

    • Delphine Lagarde

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA, INSA/CNRS

    • Pierre Renucci

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA

    • Thierry Amand

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA, INSA/CNRS

    • Alistair Rowe

      Ecole Polytechnique

    • Daniel Paget

      PMC Ecole Polytechnique

    • Fausto Sirotti

      Laboratoire de Physique Matiere Condensee

    • Min Yang

      University of Rochester

    • Van Tuan Dinh

      University of Rochester

    • Takashi Taniguchi

      National Institute for Materials Science, Kyoto Univ, International Center for Materials Nanoarchitectonics, National Institute of Materials Science, Kyoto University, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, National Institute for Materials Science, Japan, National Institute For Materials Science, NIMS, National Institute for Material Science, International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

    • Kenji Watanabe

      National Institute for Materials Science, Research Center for Functional Materials, National Institute of Materials Science, Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-044, Japan, NIMS, Research Center for Functional Materials, National Institute for Materials Science, National Institute for Materials Science, Japan, Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan, NIMS Japan

    • Scott A Crooker

      Los Alamos National Laboratory

    • Hanan Dery

      University of Rochester

    • Xavier Marie

      INSA University of Toulouse

    View abstract →

  • Terahertz Spin Resonance of Proximitized Dirac Electrons

    ORAL

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    Publication: [1] I. Zutic et al., Mater. Today, 22, 85 (2019)<br>[2] P. U. Asshoff et al., 2D Mater., 4 031004 (2017)<br>[3] K. S. Denisov, Phys. Rev. B, 105, 045413 (2022)<br>[4] K. S. Denisov, I. V. Rozhansky, S. Valenzuela, and I. Zutic, preprint.

    Presenters

    • Konstantin Denisov

      Ioffe Institute, St. Petersburg, Russian Federation

    Authors

    • Konstantin Denisov

      Ioffe Institute, St. Petersburg, Russian Federation

    • Igor V Rozhansky

      Weizmann Institute of Science, Rehovot, Israel, Ioffe Institute, St. Petersburg, Russian Federation

    • Sergio O Valenzuela

      Catalan Institute of Nanoscience and Nanotechnology (ICN2), Spain

    • Igor Zutic

      State Univ of NY - Buffalo, University at Buffalo, State Univ of NY - Buffalo,

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  • Magnetically correlated defects in a quasi-1D electronic van der Waals magnetic semiconductor

    ORAL

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    Publication: Klein, J. et al. arXiv: 2207.02884 (2022)<br>Klein, J. et al. arXiv:2205.13456 (2022)

    Presenters

    • Julian Klein

      Massachusetts Institute of Technology

    Authors

    • Julian Klein

      Massachusetts Institute of Technology

    • Zhigang Song

      Harvard John A. Paulson School Of Engineering And Applied Sc

    • Benjamin Pingault

      Harvard University, Delft University of Technology, Harvard University

    • Florian Dirnberger

      Technical University of Dresden, The City College of New York, City College of New York

    • Hang Chi

      Massachusetts Institute of Technology

    • Jonathan Curtis

      Harvard

    • Rami Dana

      Massachusetts Institute of Technology

    • Rezlind Bushati

      City University of New York, City College of New York

    • Jiamin Quan

      University of Texas at Austin

    • Lukas Dekanovsky

      Department of Inorganic Chemistry, University of Chemistry and Technology Prague

    • Zdenek Sofer

      Department of Inorganic Chemistry, University of Chemistry and Technology Prague

    • Andrea Alu

      The City College of New York

    • Vinod M Menon

      The City College of New York, City College of New York

    • Jagadeesh S Moodera

      Massachusetts Institute of Technology MIT

    • Marko Lon?ar

      Harvard University, Harvard

    • Prineha Narang

      College of Letters and Science, University of California, Los Angeles (UCLA), CA, USA 90095, Harvard

    • Frances M Ross

      Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT

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  • Developing III-V spin optoelectronic devices operating at zero magnetic field

    ORAL

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    Publication: [1] S. H. Liang, T. T. Zhang, P. Barate, J. Frougier, M. Vidal, P. Renucci, B. Xu, H. Jaffrès, J.-M. George, X. Devaux, M. Hehn, X. Marie, S. Mangin, H. X. Yang, A. Hallal, M. Chshiev, T. Amand, H. F. Liu, D. P. Liu, X. F. Han, Z. G. Wang, and Y. Lu, "Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector", Physical Review B, 90, 085310 (2014).<br>[2] F. Cadiz, A. Djeffal, D. Lagarde, A. Balocchi, B. S. Tao, B. Xu, S.H. Liang, M. Stoffel, X. Deveaux, H. Jaffres, J.M. George, M. Hehn, S. Mangin, H. Carrere, X. Marie, T. Amand, X. F. Han, Z. G. Wang, B. Urbaszek, Y. Lu, and P. Renucci, "Electrical initialization of electron and nuclear spins in a single quantum dot at zero magnetic field", Nano Letters 18, 2381 (2018).<br>[3] Bingshan Tao, Philippe Barate, Xavier Devaux, Pierre Renucci, Julien Frougier, Abdelhak Djeffal, Shiheng Liang, Bo Xu, Michel Hehn, Henri Jaffrès, Jean-Marie George, Xavier Marie, Stéphane Mangin, Xiufeng Han, Zhanguo Wang and Yuan Lu, "Atomic-Scale Understanding of High Thermal Stability of Mo/CoFeB/MgO Spin Injector for Spin-Injection in Remanence", Nanoscale 10, 10213-10220 (2018).<br>[4] Alaa E. Giba, Xue Gao, Mathieu Stoffel, Xavier Devaux, Bo Xu, Xavier Marie, Pierre Renucci, Henri Jaffrès, Jean-Marie George, Guangwei Cong, Zhanguo Wang, Hervé Rinnert and Yuan Lu, "Spin Injection and Relaxation in p-Doped (In,Ga)As/GaAs Quantum-Dot Spin Light-Emitting Diode at Zero Magnetic Field", Physical Review Applied 14, 034017 (2020).<br>[5] F. Cadiz, D. Lagarde, B. Tao, J. Frougier, B. Xu, X. Devaux, S. Migot, Z. G. Wang, X. F. Han, J.-M. George, H. Carrere, A. Balocchi, T. Amand, X. Marie, B. Urbaszek, H. Jaffrès, Y. Lu and P. Renucci, "Electrical detection of light helicity using a quantum-dot-based hybrid device at zero magnetic field", Physical Review Materials 4, 124603 (2020).

    Presenters

    • Yuan Lu

      Institut Jean Lamour

    Authors

    • Yuan Lu

      Institut Jean Lamour

    • Pierre Renucci

      Institut National des Sciences Appliquee CNRS-LPCNO-INSA

    • Henri Jaffrès

      Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France

    • Jean-Marie George

      Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France

    • Xavier Marie

      INSA University of Toulouse

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  • The dynamics of circular polarization in spin-lasers.

    ORAL

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    Presenters

    • Krish Patel

      State Univ of NY - Buffalo

    Authors

    • Krish Patel

      State Univ of NY - Buffalo

    • Igor Zutic

      State Univ of NY - Buffalo, University at Buffalo, State Univ of NY - Buffalo,

    • Gaofeng Xu

      Hangzhou Dianzi University

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  • Delocalization of Ubiquitous, Ultra-Sharp dd Excitations in Ni<sup>2+</sup>-based van der Waals Magnets Probed with Resonant Inelastic X-ray Scattering

    ORAL

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    Presenters

    • Yi Tseng

      Massachusetts Institute of Technology

    Authors

    • Connor A Occhialini

      Massachusetts Institute of Technology

    • Yi Tseng

      Massachusetts Institute of Technology

    • Qian Song

      Massachusetts Institute of Technology, Massachusetts Institute of Technology MIT

    • Mark Blei

      Arizona State University, Arizona state university, ASU

    • Sefaattin Tongay

      Arizona State University, FIAP

    • Valentina Bisogni

      Brookhaven National Laboratory, NSLS II, Brookhaven National Lab

    • Jonathan Pelliciari

      Brookhaven National Laboratory, NSLS II, Brookhaven National Lab

    • Riccardo Comin

      Massachusetts Institute of Technology MIT, Massachusetts Institute of Technology

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  • Exciton-spin interaction in charge-transfer insulators

    ORAL

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    Presenters

    • Tatsuya Kaneko

      Osaka University

    Authors

    • Tatsuya Kaneko

      Osaka University

    • Yuta Murakami

      RIKEN CEMS

    • Denis Golez

      Jozef Stefan Institute

    • Zhiyuan Sun

      Tsinghua University, Harvard University

    • Andrew Millis

      Columbia University, Columbia University, Flatiron Institute

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  • High Resolution Polar Kerr Effect Studies of CsV3Sb5

    ORAL

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    Publication: David R. Saykin, Camron Farhang, Erik D. Kountz, Dong Chen, Brenden R. Ortiz, Chandra Shekhar, Claudia Felser, Stephen D. Wilson, Ronny Thomale, Jing Xia, Aharon Kapitulnik<br>High Resolution Polar Kerr Effect Studies of CsV3Sb5: Tests for Time Reversal Symmetry Breaking Below the Charge Order Transition<br>https://arxiv.org/abs/2209.10570

    Presenters

    • David Saykin

      Stanford University

    Authors

    • David Saykin

      Stanford University

    • Camron Farhang

      University of California, Irvine

    • Erik D Kountz

      Stanford University

    • Dong Chen

      Max Planck Institute for Chemical Physics of Solids

    • Brenden Ortiz

      University of California, Santa Barbara

    • Chandra Shekhar

      Max Planck Institute for Chemical Physics of Solids

    • Claudia Felser

      Max Planck Institute for Chemical Physic, Max Planck Institute for Chemical Physics of Solids

    • Stephen D Wilson

      Materials Department, University of California Santa Barbara, University of California, Santa Barbara, UCSB

    • Ronny Thomale

      Julius-Maximilians University of Wuerzburg, Julius-Maximilians University of Wuerzbu, Institut für Theoretische Physik und Astrophysik Universität Würzburg, 97074 Würzburg, Germany, University of Wuerzburg

    • Jing Xia

      University of California, Irvine

    • Aharon Kapitulnik

      Stanford Univ

    View abstract →