High-throughput Design of Interfacial Perpendicular Magnetic Anisotropy at Materials Interfaces
ORAL
Abstract
Perpendicular magnetic anisotropy (PMA) at ferromagnet/insulator interfaces has important technological applications in spintronic devices like magnetic recording and sensing devices. In recent years, perpendicular magnetic tunnel junctions (p-MTJs) with strong PMA have attracted increasing interest because of their high stability and low energy consumption. Heusler alloys are a family of compounds with promising magnetic properties for the development of p-MTJs. However, choosing appropriate Heusler ferromagnets and insulators with desirable interfacial properties is challenging. In this talk, I will discuss our recent research progress to search for candidate Heusler/MgO material interfaces with strong PMA and other desired material properties for spintronic technologies using a high-throughput screening approach.
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Presenters
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Kesong Yang
University of California, San Diego
Authors
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Kesong Yang
University of California, San Diego
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Sicong Jiang
University of California, San Diego