Cavity mode dependence of terahertz emission power from stacked intrinsic Josephson junction Bi<sub>2</sub>Sr<sub>2</sub>CaCu<sub>2</sub>O<sub>8</sub> sources
ORAL
Abstract
The extremely anisotropic high-temperature superconductor Bi2Sr2CaCu2O8 contains stacked 'intrinsic' Josephson junctions with a large superconducting gap energy. Mesa-shaped devices constructed from this material are therefore a promising source of coherent, continuous-wave radiation in the 'terahertz gap' range, which spans from around 0.3 THz to 2.0 THz.
Bi2Sr2CaCu2O8 THz sources have been most typically studied at emission frequencies ranging from 0.3 THz to 1.0 THz, corresponding to free space wavelengths ranging from approximately 900 microns to 300 microns. Since the emission wavelength is comparable to or larger than the dimensions of the stack of Josephson junctions, the far-field THz power radiated by the device is broadly distributed over 2π steradians of solid angle.
For a large rectangular stack of optimally-doped Bi2Sr2CaCu2O8 Josephson junctions, we have mapped the angular distribution of the emitted THz power in (θ, φ)-space. We find that the (θ, φ)-dependence of the emitted THz power depends strongly upon which THz-frequency cavity mode is being excited within the stack. We also find that the total integrated THz power for these modes ranges from tens of microwatts to a few hundred microwatts for this device. Our results provide direct confirmation of estimates for the emitted THz power from stacked Bi2Sr2CaCu2O8 sources that have been previously reported in the literature.
Bi2Sr2CaCu2O8 THz sources have been most typically studied at emission frequencies ranging from 0.3 THz to 1.0 THz, corresponding to free space wavelengths ranging from approximately 900 microns to 300 microns. Since the emission wavelength is comparable to or larger than the dimensions of the stack of Josephson junctions, the far-field THz power radiated by the device is broadly distributed over 2π steradians of solid angle.
For a large rectangular stack of optimally-doped Bi2Sr2CaCu2O8 Josephson junctions, we have mapped the angular distribution of the emitted THz power in (θ, φ)-space. We find that the (θ, φ)-dependence of the emitted THz power depends strongly upon which THz-frequency cavity mode is being excited within the stack. We also find that the total integrated THz power for these modes ranges from tens of microwatts to a few hundred microwatts for this device. Our results provide direct confirmation of estimates for the emitted THz power from stacked Bi2Sr2CaCu2O8 sources that have been previously reported in the literature.
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Presenters
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Timothy M Benseman
Queens College, City University of New York
Authors
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Timothy M Benseman
Queens College, City University of New York
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Sarah Elghazoly
Queens College, City University of New York
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Karen J Kihlstrom
Physical Sciences Incorporated
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Alexei E Koshelev
Argonne National Laboratory
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Ulrich Welp
Argonne National Laboratory
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Wai-Kwong Kwok
Argonne National Laboratory
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Kazuo Kadowaki
University of Tsukuba