Delta-Doped GeV<sup>-</sup> in Diamond
ORAL
Abstract
Owing to its strong optical transition and inversion symmetry, GeV- centers are an alluring system for engineering many-body physics. However, realizing center-to-center interactions has been a challenge due to the dilute stochastic formation of color centers. In this work, we demonstrate the creation of GeV- in diamond via in-situ depth localized doping (δ-doping) and discuss ways to overcome this interaction limitation. We report in-situ Germanium incorporation of 0.5 ppm and confinement to a sub-20nm layer. Additionally, we will describe the diamond growth, dopant incorporation, and present the optical characterization.
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Presenters
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Ian N Hammock
University of Chicago
Authors
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Ian N Hammock
University of Chicago
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Nazar Delegan
Argonne National Laboratory
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Xinghan Guo
University of Chicago
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F. Joseph F Heremans
Argonne National Laboratory
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Alexander A High
University of Chicago