Large-scale on-chip integration of hybrid gate-voltage addressable semiconducting quantum wells field effect nano-switch array in superconducting circuits

We experimentally demonstrate a novel realisation of scalable, addressable, and gate voltage controllable hybrid field-effect quantum chips. Each chip contains arrays of split gate hybrid junctions made from InGaAs quantum wells integrated with superconducting circuits. Each hybrid junction in the chip can be addressed through its corresponding source-drain as well as two global split gate contact pads that allow switching between (super)conducting and insulating states. We investigate the electrical response of 18 fabricated chips with a total of 144 field-effect hybrid Nb-2DEG-Nb quantum devices at cryogenic temperatures and study their switching voltage (on/off) statistics, quantum yield, and reproducibility. Our approach paves the way for the novel realisation of scalable cryogenic electronic hardware at chip scale essential for applications in classical-quantum technologies.