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Spin-valley polarization in NbSe<sub>2</sub> at van der Waals interface

ORAL

Abstract

Van der Waals materials attract growing interest as a site for the emergence of various two-dimensional (2D) properties, including luminescence properties, 2D superconductivity, 2D magnetism, and topological quantum conduction. One of the essential factors that have supported the development of vdW materials research is the symmetry breaking of the crystal structure unique to vdW materials. Among them, transition metal dichalcogenides (TMDs) with H-type polymorphism have a unique Zeeman-type spin-orbit interaction (SOI), which reflects the broken spatial inversion symmetry in the monolayer limit. A variety of novel properties coupled to the Zeeman-type SOI have been reported, such as valley-polarized luminescence and transport properties in semiconductor TMDs such as MoS2 and WSe2, and unconventional superconductivity in metal TMDs such as NbSe2 and TaS2. Here, we have focused on the effect of Zeeman-type SOI on magnetic properties and have reported the ferromagnetic modulation by Zeeman-type SOI in the heterostructure of NbSe2 with Zeeman-type SOI and ferromagnetic vanadium selenide1.

On the other hand, in the above heterostructure, not only the magnetic side was modulated by NbSe2 (Zeeman-type SOI), but also the electronic state of the NbSe2 side was modulated by the magnetism. In particular, when the magnetization is induced in NbSe2 through the interface proximity effect, the band modulation by magnetization and Zeeman-type SOI was coupled and a state called ferro-valley ferromagnetism was realized2. In this presentation, we will discuss the transport properties of the ferro-valley ferromagnetic state revealed through the details of the transport properties of this heterostructure.

Publication: [1] Matsuoka, H. et al. Nano Lett. 21, 1807–1814 (2021).<br>[2] Matsuoka, H. et al. Nat. Commun. 13, 5129 (2022).

Presenters

  • Hideki Matsuoka

    RIKEN

Authors

  • Hideki Matsuoka

    RIKEN

  • Tetsuro Habe

    Nagamori Institute of Actuators, Kyoto University of Advanced Science

  • Yoshihiro Iwasa

    Univ of Tokyo

  • Mikito Koshino

    Osaka Univ, Osaka University

  • Masaki Nakano

    Univ of Tokyo, University of Tokyo