In situ x-ray characterization of silicon carbide heteropolytypic growth during chemical vapor deposition

Silicon carbide (SiC) exhibits exceptional versatility for applications in quantum information science (QIS) owing to its numerous optically active point defect complexes with emissions ranging from the visible to infrared regimes. Its reported occurrence in over 200 polytypes and the close formation energies of the most common polytypes present both an unparalleled opportunity for additional tunability of point defects and a challenge for their control. We present the first results from a hard x-ray compatible in situ SiC chemical vapor deposition (CVD) system which show the growth of mixed polytype SiC materials in real time. X-ray surface diffraction measurements provide a sensitive probe of structural changes as a function of synthesis conditions. We discuss how our proof-of-principle measurements will enable a detailed understanding of formation of polytypic inclusions, which can then be controlled in order to optimize point defect emission properties for desired QIS applications.